461 research outputs found
Feasibility of using T-shaped feedback in teraohmmeters
The paper investigates the feasibility of using T-shaped feedback in teraohmmeters. Theoretical and experimental dependences of the output voltage of the T-shaped feedback converter on the measured resistance and circuit parameters are obtained. The use of T-shaped feedback is found to decrease the reference resistance rating from 10 GOhm to 100 Ohm that indicates 100-fold reduction (with an error of less than 1%)
Density of States and Conductivity of Granular Metal or Array of Quantum Dots
The conductivity of a granular metal or an array of quantum dots usually has
the temperature dependence associated with variable range hopping within the
soft Coulomb gap of density of states. This is difficult to explain because
neutral dots have a hard charging gap at the Fermi level. We show that
uncontrolled or intentional doping of the insulator around dots by donors leads
to random charging of dots and finite bare density of states at the Fermi
level. Then Coulomb interactions between electrons of distant dots results in
the a soft Coulomb gap. We show that in a sparse array of dots the bare density
of states oscillates as a function of concentration of donors and causes
periodic changes in the temperature dependence of conductivity. In a dense
array of dots the bare density of states is totally smeared if there are
several donors per dot in the insulator.Comment: 13 pages, 15 figures. Some misprints are fixed. Some figures are
dropped. Some small changes are given to improve the organizatio
AC Conductance in Dense Array of the GeSi Quantum Dots in Si
Complex AC-conductance, , in the systems with dense
GeSi quantum dot (QD) arrays in Si has been determined from
simultaneous measurements of attenuation, ,
and velocity, , of surface acoustic waves (SAW)
with frequencies = 30-300 MHz as functions of transverse magnetic field 18 T in the temperature range = 1-20 K. It has been shown that in the
sample with dopant (B) concentration 8.2 cm at
temperatures 4 K the AC conductivity is dominated by hopping between
states localized in different QDs. The observed power-law temperature
dependence, , and weak frequency dependence,
, of the AC conductivity are consistent with
predictions of the two-site model for AC hopping conductivity for the case of
1, where is the SAW angular frequency and
is the typical population relaxation time. At 7 K the AC
conductivity is due to thermal activation of the carriers (holes) to the
mobility edge. In intermediate temperature region 4 7 K, where AC
conductivity is due to a combination of hops between QDs and diffusion on the
mobility edge, one succeeded to separate both contributions. Temperature
dependence of hopping contribution to the conductivity above 4.5 K
saturates, evidencing crossover to the regime where 1. From
crossover condition, = 1, the typical value, , of
the relaxation time has been determined.Comment: revtex, 3 pages, 6 figure
Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by
ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered.
Difference in nucleation of quantum dots during Ge deposition at low (<600 deg
C) and high (>600 deg. C) temperatures is studied by high resolution scanning
tunneling microscopy. The atomic models of growth of both species of Ge
huts---pyramids and wedges---are proposed. The growth cycle of Ge QD arrays at
low temperatures is explored. A problem of lowering of the array formation
temperature is discussed with the focus on CMOS compatibility of the entire
process; a special attention is paid upon approaches to reduction of treatment
temperature during the Si(001) surface pre-growth cleaning, which is at once a
key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array
formation process. The temperature of the Si clean surface preparation, the
final high-temperature step of which is, as a rule, carried out directly in the
MBE chamber just before the structure deposition, determines the compatibility
of formation process of Ge-QD-array based devices with the CMOS manufacturing
cycle. Silicon surface hydrogenation at the final stage of its wet chemical
etching during the preliminary cleaning is proposed as a possible way of
efficient reduction of the Si wafer pre-growth annealing temperature.Comment: 30 pages, 11 figure
Phonon bottleneck in p-type Ge/Si quantum dots
We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck
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